Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 574
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
FAN73711MX
ON Semiconductor
42,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOP
Tape & Reel (TR) - 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A
FAN73711MX
ON Semiconductor
43,853
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOP
Cut Tape (CT) - 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A
FAN73711MX
ON Semiconductor
43,853
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOP
- - 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A
FAN3122CMX
ON Semiconductor
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR SGL 9A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -55°C ~ 150°C (TJ) Non-Inverting Low-Side 1 N-Channel MOSFET - 23ns,19ns - 10.6A,11.4A
FAN3122CMX
ON Semiconductor
12,541
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR SGL 9A HS 8-SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -55°C ~ 150°C (TJ) Non-Inverting Low-Side 1 N-Channel MOSFET - 23ns,19ns - 10.6A,11.4A
FAN3122CMX
ON Semiconductor
12,541
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR SGL 9A HS 8-SOIC
- - 4.5 V ~ 18 V -55°C ~ 150°C (TJ) Non-Inverting Low-Side 1 N-Channel MOSFET - 23ns,19ns - 10.6A,11.4A
FAN3122TMX
ON Semiconductor
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR SGL 9A TTL 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -55°C ~ 150°C (TJ) Non-Inverting Low-Side 1 N-Channel MOSFET - 23ns,19ns 0.8V,2V 10.6A,11.4A
FAN3122TMX
ON Semiconductor
8,665
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR SGL 9A TTL 8-SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -55°C ~ 150°C (TJ) Non-Inverting Low-Side 1 N-Channel MOSFET - 23ns,19ns 0.8V,2V 10.6A,11.4A
FAN3122TMX
ON Semiconductor
8,665
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR SGL 9A TTL 8-SOIC
- - 4.5 V ~ 18 V -55°C ~ 150°C (TJ) Non-Inverting Low-Side 1 N-Channel MOSFET - 23ns,19ns 0.8V,2V 10.6A,11.4A
IRS2127STRPBF
Infineon Technologies
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
Tape & Reel (TR) - 12 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
IRS2127STRPBF
Infineon Technologies
10,784
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
Cut Tape (CT) - 12 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
IRS2127STRPBF
Infineon Technologies
10,784
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
- - 12 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
IRS21271STRPBF
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
Tape & Reel (TR) - 9 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
IRS21271STRPBF
Infineon Technologies
4,296
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
Cut Tape (CT) - 9 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
IRS21271STRPBF
Infineon Technologies
4,296
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8-SOIC
- - 9 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
IR2127STRPBF
Infineon Technologies
22,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER CURR SENSE 1CHAN 8SOIC
Tape & Reel (TR) - 12 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V 250mA,500mA
IR2127STRPBF
Infineon Technologies
23,326
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER CURR SENSE 1CHAN 8SOIC
Cut Tape (CT) - 12 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V 250mA,500mA
IR2127STRPBF
Infineon Technologies
23,326
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER CURR SENSE 1CHAN 8SOIC
- - 12 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V 250mA,500mA
FAN7171MX-F085
ON Semiconductor
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A
FAN7171MX-F085
ON Semiconductor
4,990
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Cut Tape (CT) Automotive,AEC-Q100 10 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A