- Packaging：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 15
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Supplier Device Package | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
- | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | N-Channel MOSFET | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
5,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | N-Channel MOSFET | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
5,636
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-MLP
|
- | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | N-Channel MOSFET | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | N-Channel MOSFET | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | N-Channel MOSFET | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
- | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | N-Channel MOSFET | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-MLP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-MLP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-MLP
|
- | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Inverting | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER 6A 8TDFN
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Non-Inverting | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2V | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A 8TDFN
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Non-Inverting | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2V | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A 8TDFN
|
- | -40°C ~ 150°C (TJ) | 8-DFN (2x3) | Non-Inverting | N-Channel，P-Channel MOSFET | 10ns，10ns | 0.8V，2V | 6A，6A |
