- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 582
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
23,077
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-SOIC
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- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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ON Semiconductor |
1,469
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR HIGH SIDE 8-SOIC
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Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
1,860
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR CURR SENSE 8SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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|
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IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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Linear Technology/Analog Devices |
605
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR HIGH-SIDE 10MSOP
|
- | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | High-Side | 1 | N-Channel MOSFET | 80V | 90ns，40ns | - | - | ||
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IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Maxim Integrated |
3,423
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR MOSFET HI-SIDE NCH 8-UMAX
|
- | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V，2V | - | ||
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Renesas Electronics America Inc. |
4,042
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER PIN 40MHZ 3STATE 8SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
7,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8-SOIC
|
- | 4.5 V ~ 12 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 12ns，12.2ns | 0.8V，2.4V | 12A，12A | ||
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|
|
IXYS Integrated Circuits Division |
4,652
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
- | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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|
|
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
- | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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|
|
IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE TO-263-5
|
- | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
- | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting，Non-Inverting | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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|
|
Linear Technology/Analog Devices |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
- | 60V (Max) | -55°C ~ 150°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | High-Side | 1 | N-Channel MOSFET | 80V | 90ns，40ns | - | - | ||
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|
|
IXYS-RF |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A HI DCB
|
- | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS-RF |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A LOW DCB
|
- | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD，Flat Lead Exposed Pad | - | - | Non-Inverting | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 4ns，4ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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|
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Microchip Technology |
1,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF HI/LOW SIDE 8SOIC
|
- | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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|
|
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A |
