- Packaging：
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- Series：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 6
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 22ns，16ns | 0.8V，2V | 4A，8A | ||
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Maxim Integrated |
2,143
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 22ns，16ns | 0.8V，2V | 4A，8A | ||
|
|
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Maxim Integrated |
2,143
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
- | Automotive，AEC-Q100 | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 22ns，16ns | 0.8V，2V | 4A，8A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 8A SGL 10TDFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 22ns，16ns | 0.8V，2V | 4A，8A | ||
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
Tape & Reel (TR) | - | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 24ns，16ns | - | 4A，8A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
160MOHM SMARTFET
|
- | - | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | CMOS | High-Side | IGBT | - | 0.9V，2.1V | - |
