Découvrez les produits 9
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Driven Configuration Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MIC5021BM
Microchip Technology
Enquête
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-
MOQ: 570  MPQ: 1
IC DRIVER MOSFET HISIDE HS 8SOIC
Tube 12 V ~ 36 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021BM-TR
Microchip Technology
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET HISIDE HS 8SOIC
Tape & Reel (TR) 12 V ~ 36 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021BN
Microchip Technology
Enquête
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-
MOQ: 500  MPQ: 1
IC DRIVER MOSFET HI SIDE HS 8DIP
Tube 12 V ~ 36 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021YN
Microchip Technology
334
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET HI SIDE HS 8DIP
Tube 12 V ~ 36 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021YM
Microchip Technology
604
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSF HI SIDE HS 8-SOIC
Tube 12 V ~ 36 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021YM-TR
Microchip Technology
Enquête
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-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET HISIDE HS 8SOIC
Tape & Reel (TR) 12 V ~ 36 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021YM-TR
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET HISIDE HS 8SOIC
Cut Tape (CT) 12 V ~ 36 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 0.8V,2V -
MIC5021YM-TR
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER MOSFET HISIDE HS 8SOIC
- 12 V ~ 36 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount High-Side IGBT,N-Channel MOSFET 0.8V,2V -
M57161L-01
Powerex Inc.
Enquête
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MOQ: 8  MPQ: 1
IC GATE DRVR FOR IGBT MOD
Bulk 14.3 V ~ 15.7 V -20°C ~ 60°C (TA) 28-SIP,15 Leads Module Through Hole Low-Side IGBT - 7A,7A