- Voltage - Supply：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 41
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | - | 3A，3A | ||
|
|
|
ON Semiconductor |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | - | 3A，3A | ||
|
|
|
ON Semiconductor |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 6-MLP (2x2) | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 13ns，9ns | - | 3A，3A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC GATE DRIVER ULT FAST 9A 6-DFN
|
Bulk | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-DFN (4x5) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 224 MPQ: 1
|
IC GATE DRIVER 14A LO SIDE 6-DFN
|
Tray | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-DFN (4x5) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | 25ns，22ns | 1V，2.5V | 14A，14A | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE 2X2 QF
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Non-Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-DFN (2x2) | Inverting | High-Side or Low-Side | N-Channel，P-Channel MOSFET | 40ns，28ns | 0.8V，2V | 500mA，500mA |
