- Fabricant:
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- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,823
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Renesas Electronics America Inc. |
27,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
- | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Linear Technology/Analog Devices |
605
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Tube | - | 60V (Max) | -40°C ~ 125°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | - | ||||
IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
Maxim Integrated |
3,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET HI-SIDE NCH 8-UMAX
|
Tube | - | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V,2V | - | ||||
Renesas Electronics America Inc. |
4,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER PIN 40MHZ 3STATE 8SOIC
|
Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
7,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8-SOIC
|
Tube | - | 4.5 V ~ 12 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | 1 | IGBT | - | 12ns,12.2ns | 0.8V,2.4V | 12A,12A | ||||
IXYS Integrated Circuits Division |
4,652
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,3.5V | 30A,30A | ||||
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,3.5V | 30A,30A | ||||
IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE TO-263-5
|
Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,3.5V | 30A,30A | ||||
Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting,Non-Inverting | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Linear Technology/Analog Devices |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Tube | - | 60V (Max) | -55°C ~ 150°C (TJ) | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | High-Side | 1 | N-Channel MOSFET | 80V | 90ns,40ns | - | - | ||||
Powerex Inc. |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR FOR IGBT MOD
|
Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module,12 Leads | Module | Through Hole | Non-Inverting | Low-Side | 1 | IGBT | - | 500ns,300ns | - | 2A,2A | ||||
IXYS-RF |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A HI DCB
|
Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD,Flat Lead Exposed Pad | - | - | Non-Inverting | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 4ns,4ns | 0.8V,3.5V | 30A,30A | ||||
IXYS-RF |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR RF 30A LOW DCB
|
Tube | - | 8 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-SMD,Flat Lead Exposed Pad | - | - | Non-Inverting | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 4ns,4ns | 0.8V,3.5V | 30A,30A | ||||
Powerex Inc. |
2,246
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR/DC-DC CONV 12A
|
Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Through Hole | Non-Inverting | Low-Side | 1 | IGBT | - | 300ns,300ns | - | 12A,12A | ||||
Power Integrations |
70
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SINGLE GATE DRIVER 35A
|
Bulk | SCALE-2 | 23.5 V ~ 26.5 V | -40°C ~ 85°C (TA) | Module | Module | Surface Mount | - | High-Side or Low-Side | 1 | IGBT | 6500V | 9ns,30ns | - | 35A,35A |