- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 151
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
122
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
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Microchip Technology |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 14DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
146
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Through Hole | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
157
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
1,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
268
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Linear Technology/Analog Devices |
89
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SYNC RECTIFIER 8-SOIC
|
Tube | - | 4.5 V ~ 11 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 2A，2A | |||
|
|
Microchip Technology |
498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
112
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV-NON 4A 8-MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
63
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV-NON 4A 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V，2.4V | 4A，4A | |||
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A |
