Découvrez les produits 27
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH
UCC27714D
Texas Instruments
502
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
Tube 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 1.2V,2.7V
UCC27714DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
Tape & Reel (TR) 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 1.2V,2.7V
UCC27714DR
Texas Instruments
6,035
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
Cut Tape (CT) 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 1.2V,2.7V
UCC27714DR
Texas Instruments
6,035
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
- 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 1.2V,2.7V
L6491D
STMicroelectronics
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
Tube 10 V ~ 20 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 1.45V,2V
L6491DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SO Non-Inverting Independent Half-Bridge - IGBT,N-Channel MOSFET 600V 1.45V,2V
IRS21851STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE SGL 8-SOIC
Tape & Reel (TR) 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V
IRS21851STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE SGL 8-SOIC
Cut Tape (CT) 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V
IRS21851STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE SGL 8-SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V
IRS21851SPBF
Infineon Technologies
Enquête
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-
MOQ: 475  MPQ: 1
IC DRIVER HIGH SIDE 600V 8-SOIC
Tube 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V
IRS21850SPBF
Infineon Technologies
Enquête
-
-
MOQ: 665  MPQ: 1
IC DVR HIGH SIDE SGL 600V 8-SOIC
Tube 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V
IRS21850STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HIGH SIDE 600V 8SOIC
Tape & Reel (TR) 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V
MIC4223YMME
Microchip Technology
1,257
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL-INV 4A 8-MSOP
Tube 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4225YM-TR
Microchip Technology
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL-INV 4A 8SOIC
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4225YM-TR
Microchip Technology
2,469
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL-INV 4A 8SOIC
Cut Tape (CT) 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4225YM-TR
Microchip Technology
2,469
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL-INV 4A 8SOIC
- 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4224YM-TR
Microchip Technology
Enquête
-
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MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL-INV 4A 8SOIC
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4224YMME-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL-NON 4A 8MSOP
Tape & Reel (TR) 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4224YM
Microchip Technology
268
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL-NON 4A 8-SOIC
Tube 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V
MIC4224YMME
Microchip Technology
498
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR DUAL-NON 4A 8MSOP
Tube 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 0.8V,2.4V