- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 27
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | ||
Texas Instruments |
502
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tube | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 1.2V,2.7V | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Tape & Reel (TR) | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 1.2V,2.7V | ||||
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
Cut Tape (CT) | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 1.2V,2.7V | ||||
Texas Instruments |
6,035
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
- | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 1.2V,2.7V | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A HIGH/LOW 14SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 1.45V,2V | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR 4A HIGH/LOW 14SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SO | Non-Inverting | Independent | Half-Bridge | - | IGBT,N-Channel MOSFET | 600V | 1.45V,2V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE SGL 8-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE SGL 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE SGL 8-SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 475 MPQ: 1
|
IC DRIVER HIGH SIDE 600V 8-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 665 MPQ: 1
|
IC DVR HIGH SIDE SGL 600V 8-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH SIDE 600V 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | ||||
Microchip Technology |
1,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-MSOP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
268
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8-SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | ||||
Microchip Technology |
498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V |