Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 53
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5109AMAX/NOPB
Texas Instruments
35,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8SOIC
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BMAX/NOPB
Texas Instruments
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BSD/NOPB
Texas Instruments
51,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF 1A 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109ASD/NOPB
Texas Instruments
36,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5107MAX/NOPB
Texas Instruments
17,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRIDGE HV 8-SOIC
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.3A,1.4A
LM5107SD/NOPB
Texas Instruments
13,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.3A,1.4A
LM5105SD/NOPB
Texas Instruments
21,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DVR GATE HALF BRIDGE 10WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.8A,1.8A
LM5109BQNGTTQ1
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Automotive,AEC-Q100 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
UCC27714DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR HI/LO 600V 4A 14SOIC
- 10 V ~ 18 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 1.2V,2.7V 4A,4A
LM5105SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC DVR GATE HALF BRIDGE 10WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.8A,1.8A
LM5109BSDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DRIVER HALF 1A 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109ASDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109MAX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8SOIC
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1A,1A
L6491DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR 4A HIGH/LOW 14SOIC
- 10 V ~ 20 V -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SO Non-Inverting Independent Half-Bridge - IGBT,N-Channel MOSFET 600V 1.45V,2V 4A,4A
AUIRS21814STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
AUIRS2181STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
AUIRS2191STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 3.5A,3.5A
LM5109SD
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1A,1A
IRS21851STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE SGL 8-SOIC
- 10 V ~ 20 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4A,4A
LM5107SDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC DRIVER GATE HALF BRIDGE 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1.3A,1.4A