- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 15
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
7,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
7,711
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
157
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 188 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 46 MPQ: 1
|
IC LOW SIDE DRIVER 16SOIC
|
Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 1200V | 1V,3.65V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 46 MPQ: 1
|
IC HIGH SIDE DRIVER 16SOIC
|
Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 1200V | 1V,3.65V | 2A,2A |