Fabricant:
Series:
Voltage - Supply:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 15
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TC4469COE713
Microchip Technology
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469COE713
Microchip Technology
7,711
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Cut Tape (CT) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469COE
Microchip Technology
2,670
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468COE
Microchip Technology
1,293
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468EOE
Microchip Technology
798
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4467COE
Microchip Technology
122
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD NAND 16SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469EOE
Microchip Technology
157
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468COE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468COE713
Microchip Technology
519
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
Cut Tape (CT) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468COE713
Microchip Technology
519
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
- - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4467COE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR QUAD NAND 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469EOE713
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4467EOE
Microchip Technology
Enquête
-
-
MOQ: 188  MPQ: 1
IC MOSFET DVR QUAD NAND 16SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
IXBD4410SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC LOW SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 1200V 1V,3.65V 2A,2A
IXBD4411SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC HIGH SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel,P-Channel MOSFET 1200V 1V,3.65V 2A,2A