- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 3.5A，3.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DVR DUAL HIGH SIDE 16-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 3.5A，3.5A | ||
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Microchip Technology |
7,000
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3 jours |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
7,711
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
2,670
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
1,293
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR QUAD AND 16SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
798
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
122
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR QUAD NAND 16SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
157
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
519
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR QUAD AND 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
519
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 188 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
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IXYS |
Enquête
|
- |
-
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MOQ: 46 MPQ: 1
|
IC LOW SIDE DRIVER 16SOIC
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Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 1200V | 1V，3.65V | 2A，2A |
