- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 52
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
13,251
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.3A，1.4A | ||
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|
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Texas Instruments |
6,840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | ||
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Texas Instruments |
1,510
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1A，1A | ||
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|
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Texas Instruments |
502
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO 600V 4A 14SOIC
|
- | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 1.2V，2.7V | 4A，4A | ||
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|
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Texas Instruments |
2,072
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | ||
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STMicroelectronics |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 4A HIGH/LOW 14SOIC
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- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 1.45V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 475 MPQ: 1
|
IC DRIVER HIGH SIDE 600V 8-SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 225 MPQ: 1
|
IC DVR DUAL HIGH SIDE 16-SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 665 MPQ: 1
|
IC DVR HIGH SIDE SGL 600V 8-SOIC
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 275 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 285 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 3.5A，3.5A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.3A，1.4A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 475 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 0.8V，2.2V | 1A，1A | ||
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|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 570 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1A，1A | ||
|
|
Microchip Technology |
2,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
466
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 14DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 14DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 0.8V，2.4V | 1.2A，1.2A |
