- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Driven Configuration:
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 16
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 275 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 0.8V,2.5V | 1.9A,2.3A | ||||
Microchip Technology |
122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
146
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
1,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-MSOP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-MSOP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Low-Side | 2 | N-Channel MOSFET | - | 0.8V,2.4V | 4A,4A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 188 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 58 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14CDIP
|
Tube | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300",7.62mm) | 14-CERDIP | Through Hole | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 87 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14CDIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-CDIP (0.300",7.62mm) | 14-CERDIP | Through Hole | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 0.8V,2.4V | 1.2A,1.2A |