Fabricant:
Voltage - Supply:
Supplier Device Package:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 6
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5109BQNGTTQ1
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (4x4) N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BQNGTTQ1
Texas Instruments
1,955
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Cut Tape (CT) 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (4x4) N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BQNGTTQ1
Texas Instruments
1,955
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
- 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (4x4) N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
AUIRS2191STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC IGBT,N-Channel MOSFET 600V 0.8V,2.5V 3.5A,3.5A
AUIRS2191S
Infineon Technologies
Enquête
-
-
MOQ: 180  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC IGBT,N-Channel MOSFET 600V 0.8V,2.5V 3.5A,3.5A
LM5109BQNGTRQ1
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DRIVER HALF BRIDGE 8WSON
Tape & Reel (TR) 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (4x4) N-Channel MOSFET 108V 0.8V,2.2V 1A,1A