Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 151
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
LM5109ASD
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109ASD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109ASD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8WSON
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BMAX
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BMAX
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BMAX
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BSD
Texas Instruments
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HALF 1A 8WSON
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BSD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF 1A 8WSON
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109BSD
Texas Instruments
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HALF 1A 8WSON
- - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 108V 0.8V,2.2V 1A,1A
LM5109MAX
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HALF-BRIDGE 100V 1A 8SOIC
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 118V 0.8V,2.2V 1A,1A
TC4469COE713
Microchip Technology
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469COE713
Microchip Technology
7,711
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Cut Tape (CT) - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469COE
Microchip Technology
2,670
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR AND/INV 16SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468COE
Microchip Technology
1,293
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468CPD
Microchip Technology
466
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 14DIP
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-PDIP Through Hole Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4469CPD
Microchip Technology
316
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR AND/INV 14DIP
Tube - 4.5 V ~ 18 V 0°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
TC4468EOE
Microchip Technology
798
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 16SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A
LTC3900ES8#PBF
Linear Technology/Analog Devices
352
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER RECT SYNC CONV 8SOIC
Tube - 4.5 V ~ 11 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - - 2A,2A
LTC3901EGN#PBF
Linear Technology/Analog Devices
440
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER RECT SYNC CONV 16SSOP
Tube - 4.5 V ~ 11 V -40°C ~ 85°C (TA) 16-SSOP (0.154",3.90mm Width) 16-SSOP Surface Mount Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - - 2A,2A
TC4468EPD
Microchip Technology
123
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR QUAD AND 14DIP
Tube - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-PDIP Through Hole Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 0.8V,2.4V 1.2A,1.2A