Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 255
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL6613EIB
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613EIB-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613EIBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613EIBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
MAX5057AASA+
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5062DASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns - 2A,2A
MAX5062CASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns - 2A,2A
MAX5057AASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5063DASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 0.8V,2V 2A,2A
MAX15018AASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSF DRVR HALF BRDG HS 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 50ns,40ns - 3A,3A
MAX15012DASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns - 2A,2A
ISL6613ECBZR5214
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613ECBZ-TR5214
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL89163FBECZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89163FBECZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89164FBECZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89164FBECZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89165FBECZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89165FBECZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89165FRTCZ
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tube - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A