- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 171
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Analog Devices Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
6,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
4,679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
3,463
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL IN/NON 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
2,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
Maxim Integrated |
392
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
|
|
|
Analog Devices Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Maxim Integrated |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
|
|
|
Maxim Integrated |
437
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Low-Side | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
1,649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
|
|
|
Maxim Integrated |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
|
|
|
Maxim Integrated |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Half-Bridge | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A |
