Découvrez les produits 79
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX15012DASA+
Maxim Integrated
171
3 jours
-
MOQ: 1  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tube 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns 2A,2A
MAX5062CASA+
Maxim Integrated
190
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 2A,2A
MP18021HN-LF-Z
Monolithic Power Systems Inc.
2,200
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER
Cut Tape (CT) - - - - - - - - - -
MP18021HN-LF-Z
Monolithic Power Systems Inc.
2,200
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER
- - - - - - - - - - -
ISL6613AEIBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6613AEIBZ-T
Renesas Electronics America Inc.
4,558
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR SYNC BUCK 8EPSOIC
Cut Tape (CT) 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6613AEIBZ-T
Renesas Electronics America Inc.
4,558
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR SYNC BUCK 8EPSOIC
- 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
MAX15018AASA+
Maxim Integrated
27
3 jours
-
MOQ: 1  MPQ: 1
IC MOSF DRVR HALF BRDG HS 8-SOIC
Tube 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 50ns,40ns 3A,3A
ISL6612AECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6612ECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6612EIBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
MAX15018BASA+
Maxim Integrated
Enquête
-
-
MOQ: 200  MPQ: 1
IC MOSF DRVR HALF BRDG HS 8-SOIC
Tube 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 50ns,40ns 3A,3A
ISL6612AECBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6612ECBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6613AEIBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
ISL6612EIBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns 1.25A,2A
MAX5062DASA+
Maxim Integrated
Enquête
-
-
MOQ: 200  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 2A,2A
MAX15012CASA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tape & Reel (TR) 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns 2A,2A
MAX15012CASA+
Maxim Integrated
Enquête
-
-
MOQ: 100  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tube 8 V ~ 12.6 V -40°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns 2A,2A
HIP6601BECB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRVR MOSFET SYNC BUCK 8EPSOIC
Tube 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 15V 20ns,20ns -