- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 112
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Analog Devices Inc. |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Renesas Electronics America Inc. |
5,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRDG 100V 8EPSOIC
|
- | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Analog Devices Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
IXYS Integrated Circuits Division |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 16 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
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Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
Analog Devices Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
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Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
- | 10.8 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns，18ns | - | 1.25A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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|
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Analog Devices Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
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Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns，9ns | 1V，2.4V | 2.5A，2.5A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL NON INVERT
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
|
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
- | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 15ns，9ns | 1V，2.4V | - | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
|
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A |
