- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 48
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
2,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Analog Devices Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
4,805
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,170
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,170
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
1,855
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
1,855
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,450
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,450
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | 2 | N-Channel MOSFET | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
1,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 20ns,20ns | 1.22V,2.08V | 6A,6A | ||||
Renesas Electronics America Inc. |
486
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Independent | 2 | N-Channel MOSFET | 20ns,20ns | 1.85V,3.15V | 6A,6A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8 SOIC EXP METAL DUAL INVERT
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Single | 1 | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Independent | 2 | IGBT,N-Channel,P-Channel MOSFET | 9ns,8ns | 0.8V,3V | 4A,4A |