Découvrez les produits 48
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Channel Type Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXDI604SI
IXYS Integrated Circuits Division
2,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 4A INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Independent 2 IGBT,N-Channel,P-Channel MOSFET 9ns,8ns 0.8V,3V 4A,4A
ADP3623ARDZ-RL
Analog Devices Inc.
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3623ARDZ-RL
Analog Devices Inc.
4,805
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3623ARDZ-RL
Analog Devices Inc.
4,805
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-RL
Analog Devices Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-RL
Analog Devices Inc.
2,170
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-RL
Analog Devices Inc.
2,170
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-R7
Analog Devices Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-R7
Analog Devices Inc.
1,855
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-R7
Analog Devices Inc.
1,855
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3633ARDZ-RL
Analog Devices Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Tape & Reel (TR) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3633ARDZ-RL
Analog Devices Inc.
2,450
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Cut Tape (CT) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ADP3633ARDZ-RL
Analog Devices Inc.
2,450
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
- - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) Independent 2 N-Channel MOSFET 10ns,10ns 0.8V,2V 4A,4A
ISL89164FBEAZ
Renesas Electronics America Inc.
1,833
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 20ns,20ns 1.22V,2.08V 6A,6A
ISL89164FBEBZ
Renesas Electronics America Inc.
486
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) Independent 2 N-Channel MOSFET 20ns,20ns 1.85V,3.15V 6A,6A
IXDI602SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
2A 8 SOIC EXP METAL DUAL INVERT
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Independent 2 IGBT,N-Channel,P-Channel MOSFET 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDI602SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
2A 8 SOIC EXP METAL DUAL INVERT
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Independent 2 IGBT,N-Channel,P-Channel MOSFET 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDI609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Single 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDI609SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Single 1 IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDI604SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Independent 2 IGBT,N-Channel,P-Channel MOSFET 9ns,8ns 0.8V,3V 4A,4A