- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 18
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
9,707
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
9,707
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
- | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
14A 8SOIC EXP MTL NON INV W/ENAB
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
14A 8LEAD SOIC EXP MTL INVERTING
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
14A 8SOIC EXP MTL NON INVERTING
|
Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8SOIC EXP MTL NON INV W/ENAB
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8LEAD SOIC EXP MTL INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8SOIC EXP MTL NON INVERTING
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
Microchip Technology |
1,338
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A NONINV 8SOIC
|
Tube | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | N-Channel,P-Channel MOSFET | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 6A NONINV 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | N-Channel,P-Channel MOSFET | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
649
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INVERT 8SOIC
|
Tube | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | N-Channel,P-Channel MOSFET | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 6A INVERT 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | N-Channel,P-Channel MOSFET | 12ns,13ns | 0.8V,2.4V | 6A,6A |