Découvrez les produits 18
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Input Type Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXDN609SI
IXYS Integrated Circuits Division
8,138
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDD609SI
IXYS Integrated Circuits Division
3,785
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDN609SITR
IXYS Integrated Circuits Division
6,000
3 jours
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDN609SITR
IXYS Integrated Circuits Division
9,707
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Cut Tape (CT) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDN609SITR
IXYS Integrated Circuits Division
9,707
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDD609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDI609SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDI609SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 22ns,15ns 0.8V,3V 9A,9A
IXDD614SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
14A 8SOIC EXP MTL NON INV W/ENAB
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 25ns,18ns 0.8V,3V 14A,14A
IXDI614SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
14A 8LEAD SOIC EXP MTL INVERTING
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 25ns,18ns 0.8V,3V 14A,14A
IXDN614SITR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
14A 8SOIC EXP MTL NON INVERTING
Tape & Reel (TR) 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 25ns,18ns 0.8V,3V 14A,14A
IXDD614SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
14A 8SOIC EXP MTL NON INV W/ENAB
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 25ns,18ns 0.8V,3V 14A,14A
IXDI614SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
14A 8LEAD SOIC EXP MTL INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting IGBT,N-Channel,P-Channel MOSFET 25ns,18ns 0.8V,3V 14A,14A
IXDN614SI
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
14A 8SOIC EXP MTL NON INVERTING
Tube 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting IGBT,N-Channel,P-Channel MOSFET 25ns,18ns 0.8V,3V 14A,14A
MIC4120YME
Microchip Technology
1,338
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 6A NONINV 8SOIC
Tube 4.5 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting N-Channel,P-Channel MOSFET 12ns,13ns 0.8V,2.4V 6A,6A
MIC4120YME-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET 6A NONINV 8SOIC
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) Non-Inverting N-Channel,P-Channel MOSFET 12ns,13ns 0.8V,2.4V 6A,6A
MIC4129YME
Microchip Technology
649
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 6A INVERT 8SOIC
Tube 4.5 V ~ 20 V -40°C ~ 125°C (TJ) Inverting N-Channel,P-Channel MOSFET 12ns,13ns 0.8V,2.4V 6A,6A
MIC4129YME-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET 6A INVERT 8SOIC
Tape & Reel (TR) 4.5 V ~ 20 V -40°C ~ 125°C (TJ) Inverting N-Channel,P-Channel MOSFET 12ns,13ns 0.8V,2.4V 6A,6A