- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 10
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
2,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Strip | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
954
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH SIDE AND LOW SIDE GA
|
Tape & Reel (TR) | 8 V ~ 16 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | High-Side or Low-Side | N-Channel MOSFET | 100V | 6ns，4ns | 2V，1.8V | 3A，6A |
