- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 54
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,088
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL IN/NON 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Maxim Integrated |
392
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
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Maxim Integrated |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
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Analog Devices Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
Analog Devices Inc. |
2,492
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
Analog Devices Inc. |
2,492
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 9.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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Renesas Electronics America Inc. |
802
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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|
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Renesas Electronics America Inc. |
2,424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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|
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Maxim Integrated |
100
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Half-Bridge | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
|
|
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Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
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Maxim Integrated |
2
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Half-Bridge | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
2A 8SOIC EXP MTL DUAL IN/NON-INV
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
|
|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 1.85V，3.15V | 6A，6A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | - | 3A，3A | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Half-Bridge | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A |
