Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 255
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL6612EIB
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6612EIB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AECB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AECB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AECBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AEIB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AEIB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BECB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 7 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BECB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 7 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BECBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 7 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 7 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BEIB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 7 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BEIB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 7 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BEIBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 7 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613BEIBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 7 V ~ 13.2 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613ECB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613ECB-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613ECBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tube - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613ECBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A