- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 255
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 980 MPQ: 1
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MOSFET DRIVER 2CH 3.3V 6A 8SOIC
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSF DRVR HALF BRDG HS 8-SOIC
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Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC MOSFET DRVR DUAL 8-SOIC
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Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR DUAL 8-SOIC
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Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
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Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER 8-SOIC
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Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tape & Reel (TR) | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC HALF-BRIDGE MOSFET DVR 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | - | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
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Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 8SOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DRVR HALF BRDG 100V 8EP-SOIC
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Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR HALF BRDG 100V 8EP-SOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 0.8V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
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IC DRVR MOSFET SYNC BUCK 8EPSOIC
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Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | - | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR MOSFET SYNC BUCK 8EPSOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | - | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DRVR MOSFET SYNC BUCK 8EPSOIC
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Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | - | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR MOSFET SYNC BUCK 8EPSOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | - | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
IC DRVR MOSFET SYNC BUCK 8EPSOIC
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Tube | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | - | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR MOSFET SYNC BUCK 8EPSOIC
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Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 15V | 20ns，20ns | - | - |
