Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 255
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL89165FRTCZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 7.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-VFDFN Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 2.4V,9.6V 6A,6A
ISL89160FBEAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89161FBEAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89162FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89160FBEAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89161FBEAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89162FBEAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89160FBEBZ-T
Renesas Electronics America Inc.
Enquête
-
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89161FBEBZ-T
Renesas Electronics America Inc.
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89162FBEBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89166FBEAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89167FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89168FBEAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89160FBEBZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89161FBEBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89162FBEBZ
Renesas Electronics America Inc.
Enquête
-
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89166FBEAZ
Renesas Electronics America Inc.
Enquête
-
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89167FBEAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89168FBEAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
MAX5055AASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A