Number of Drivers:
Découvrez les produits 209
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD2106S8-13
Diodes Incorporated
2,360
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA
TD351IDT
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER GATE IGBT/MOSFET 8SOIC
Tape & Reel (TR) - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD351IDT
STMicroelectronics
1,151
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER GATE IGBT/MOSFET 8SOIC
Cut Tape (CT) - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD351IDT
STMicroelectronics
1,151
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER GATE IGBT/MOSFET 8SOIC
- - 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
DGD2181S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
DGD2181S8-13
Diodes Incorporated
1,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
DGD2181S8-13
Diodes Incorporated
1,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 40ns,20ns 0.8V,2.5V 1.9A,2.3A
AUIR3241STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IR_HSS-LSS-GATEDRIVER
Tape & Reel (TR) Automotive,AEC-Q100 3 V ~ 36 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) - - High-Side 1 - - 6μs,6μs 0.8V,2.5V -
AUIR3241STR
Infineon Technologies
1,772
3 jours
-
MOQ: 1  MPQ: 1
IR_HSS-LSS-GATEDRIVER
Cut Tape (CT) Automotive,AEC-Q100 3 V ~ 36 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) - - High-Side 1 - - 6μs,6μs 0.8V,2.5V -
AUIR3241STR
Infineon Technologies
1,772
3 jours
-
MOQ: 1  MPQ: 1
IR_HSS-LSS-GATEDRIVER
- Automotive,AEC-Q100 3 V ~ 36 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) - - High-Side 1 - - 6μs,6μs 0.8V,2.5V -
L6395D
STMicroelectronics
512
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV BCD OFFLINE 8SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
ZXGD3101N8TC
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 305ns,20ns - 2.5A,2.5A
ZXGD3101N8TC
Diodes Incorporated
298
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 305ns,20ns - 2.5A,2.5A
ZXGD3101N8TC
Diodes Incorporated
298
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- - 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 305ns,20ns - 2.5A,2.5A
L6743DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER DUAL 8SOIC
Tape & Reel (TR) - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 2A,-
L6743DTR
STMicroelectronics
135
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL 8SOIC
Cut Tape (CT) - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 2A,-
L6743DTR
STMicroelectronics
135
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER DUAL 8SOIC
- - 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 0.8V,2V 2A,-
L6387ED013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tape & Reel (TR) - 17V (Max) -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6387ED013TR
STMicroelectronics
362
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Cut Tape (CT) - 17V (Max) -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6387ED013TR
STMicroelectronics
362
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
- - 17V (Max) -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA