- Operating Temperature:
-
- Input Type:
-
- Channel Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 65
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
STMicroelectronics |
1,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Tube | -40°C ~ 150°C (TJ) | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,35ns | 0.7V,2.3V | 290mA,600mA | ||||
Diodes Incorporated |
1,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,35ns | 0.7V,2.3V | 290mA,600mA | ||||
Diodes Incorporated |
1,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 70ns,35ns | 0.7V,2.3V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | Non-Inverting | Synchronous | Half-Bridge | 2 | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,301
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | Non-Inverting | Synchronous | Half-Bridge | 2 | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,301
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | -40°C ~ 125°C (TA) | Non-Inverting | Synchronous | Half-Bridge | 2 | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | 600V | 100ns,50ns | 0.8V,2.5V | 290mA,600mA |