Number of Drivers:
Découvrez les produits 203
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3103N8TC
Diodes Incorporated
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
TD352IDT
STMicroelectronics
25,000
3 jours
-
MOQ: 2500  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Tape & Reel (TR) 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD352IDT
STMicroelectronics
26,196
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Cut Tape (CT) 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD352IDT
STMicroelectronics
26,196
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
- 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
L6388ED013TR
STMicroelectronics
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tape & Reel (TR) 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Cut Tape (CT) 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
- 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
DGD2104MS8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6384ED013TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
Tape & Reel (TR) 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
Cut Tape (CT) 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
- 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6398D
STMicroelectronics
1,820
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Tube 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6384ED
STMicroelectronics
1,049
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
Tube 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6387ED
STMicroelectronics
1,858
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tube 17V (Max) -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
ZXGD3107N8TC
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Tape & Reel (TR) 40V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
ZXGD3107N8TC
Diodes Incorporated
2,931
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Cut Tape (CT) 40V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A