PMIC - Pilotes de porte - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Current - Peak Output (Source, Sink)
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Current - Peak Output (Source, Sink)
	DGD2104MS8-13	Diodes Incorporated	2,500	3 jours	-	IC GATE DRVR HV SO8 MOQ: 2500 MPQ: 1	IC GATE DRVR HV SO8	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	70ns，35ns	290mA，600mA
	DGD2104MS8-13	Diodes Incorporated	4,735	3 jours	-	IC GATE DRVR HV SO8 MOQ: 1 MPQ: 1	IC GATE DRVR HV SO8	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	70ns，35ns	290mA，600mA
	DGD2104MS8-13	Diodes Incorporated	4,735	3 jours	-	IC GATE DRVR HV SO8 MOQ: 1 MPQ: 1	IC GATE DRVR HV SO8	-	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	70ns，35ns	290mA，600mA
	DGD1503S8-13	Diodes Incorporated	2,500	3 jours	-	IC GATE DRVR HALF BRIDGE SO-8 MOQ: 2500 MPQ: 1	IC GATE DRVR HALF BRIDGE SO-8	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	250V	70ns，35ns	290mA，600mA
	DGD1503S8-13	Diodes Incorporated	3,648	3 jours	-	IC GATE DRVR HALF BRIDGE SO-8 MOQ: 1 MPQ: 1	IC GATE DRVR HALF BRIDGE SO-8	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	250V	70ns，35ns	290mA，600mA
	DGD1503S8-13	Diodes Incorporated	3,648	3 jours	-	IC GATE DRVR HALF BRIDGE SO-8 MOQ: 1 MPQ: 1	IC GATE DRVR HALF BRIDGE SO-8	-	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	250V	70ns，35ns	290mA，600mA
	DGD2103MS8-13	Diodes Incorporated	Enquête	-	-	IC GATE DRVR HV SO8 MOQ: 2500 MPQ: 1	IC GATE DRVR HV SO8	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	70ns，35ns	290mA，600mA
	DGD2103MS8-13	Diodes Incorporated	2,401	3 jours	-	IC GATE DRVR HV SO8 MOQ: 1 MPQ: 1	IC GATE DRVR HV SO8	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	70ns，35ns	290mA，600mA
	DGD2103MS8-13	Diodes Incorporated	2,401	3 jours	-	IC GATE DRVR HV SO8 MOQ: 1 MPQ: 1	IC GATE DRVR HV SO8	-	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	70ns，35ns	290mA，600mA
	DGD2103S8-13	Diodes Incorporated	Enquête	-	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 2500 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 125°C (TA)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，35ns	290mA，600mA
	DGD2103S8-13	Diodes Incorporated	2,480	3 jours	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 125°C (TA)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，35ns	290mA，600mA
	DGD2103S8-13	Diodes Incorporated	2,480	3 jours	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	-	-	10 V ~ 20 V	-40°C ~ 125°C (TA)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，35ns	290mA，600mA
	DGD1504S8-13	Diodes Incorporated	Enquête	-	-	IC GATE DRVR HALF BRIDGE SO-8 MOQ: 2500 MPQ: 1	IC GATE DRVR HALF BRIDGE SO-8	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 125°C (TA)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	250V	70ns，35ns	290mA，600mA
	DGD1504S8-13	Diodes Incorporated	2,301	3 jours	-	IC GATE DRVR HALF BRIDGE SO-8 MOQ: 1 MPQ: 1	IC GATE DRVR HALF BRIDGE SO-8	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 125°C (TA)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	250V	70ns，35ns	290mA，600mA
	DGD1504S8-13	Diodes Incorporated	2,301	3 jours	-	IC GATE DRVR HALF BRIDGE SO-8 MOQ: 1 MPQ: 1	IC GATE DRVR HALF BRIDGE SO-8	-	-	10 V ~ 20 V	-40°C ~ 125°C (TA)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	250V	70ns，35ns	290mA，600mA
	DGD2103AS8-13	Diodes Incorporated	Enquête	-	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 2500 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，50ns	290mA，600mA
	DGD2103AS8-13	Diodes Incorporated	2,490	3 jours	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，50ns	290mA，600mA
	DGD2103AS8-13	Diodes Incorporated	2,490	3 jours	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	-	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，50ns	290mA，600mA
	DGD2104AS8-13	Diodes Incorporated	Enquête	-	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 2500 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	Tape & Reel (TR)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，50ns	210mA，360mA
	DGD2104AS8-13	Diodes Incorporated	2,455	3 jours	-	IC GATE DRVR HALF-BRIDGE 8SO MOQ: 1 MPQ: 1	IC GATE DRVR HALF-BRIDGE 8SO	Cut Tape (CT)	-	10 V ~ 20 V	-40°C ~ 150°C (TJ)	Non-Inverting	Synchronous	Half-Bridge	2	IGBT，N-Channel MOSFET	600V	100ns，50ns	210mA，360mA

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