Fabricant:
Voltage - Supply:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Input Type Channel Type Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD2181S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V Non-Inverting Independent IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
DGD2181S8-13
Diodes Incorporated
1,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V Non-Inverting Independent IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
DGD2181S8-13
Diodes Incorporated
1,404
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V Non-Inverting Independent IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
DGD2184S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V Non-Inverting Synchronous IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
DGD2184S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V Non-Inverting Synchronous IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
DGD2184S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V Non-Inverting Synchronous IGBT,N-Channel MOSFET 600V 0.8V,2.5V 1.9A,2.3A
IR7184SPBF
Infineon Technologies
Enquête
-
-
MOQ: 3800  MPQ: 1
IC MOSFET IGBT
Tube - 10 V ~ 20 V Non-Inverting Synchronous IGBT,N-Channel MOSFET 700V 0.8V,2.7V 1.9A,2.3A
AUIR2085S
Infineon Technologies
Enquête
-
-
MOQ: 190  MPQ: 1
IC DVR HALF-BRDG SELF OSC 8SOIC
Tube Automotive,AEC-Q100 10 V ~ 15 V RC Input Circuit Synchronous N-Channel MOSFET 100V - 1A,1A