Découvrez les produits 126
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
L6388ED013TR
STMicroelectronics
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tape & Reel (TR) - 17V (Max) -40°C ~ 125°C (TJ) Inverting Independent IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Cut Tape (CT) - 17V (Max) -40°C ~ 125°C (TJ) Inverting Independent IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
- - 17V (Max) -40°C ~ 125°C (TJ) Inverting Independent IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
DGD2104MS8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Synchronous IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6384ED013TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
Tape & Reel (TR) - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) Inverting Synchronous IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
Cut Tape (CT) - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) Inverting Synchronous IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
- - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) Inverting Synchronous IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6398D
STMicroelectronics
1,820
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) Inverting,Non-Inverting Independent IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6384ED
STMicroelectronics
1,049
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8-SOIC
Tube - 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) Inverting Synchronous IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6387ED
STMicroelectronics
1,858
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tube - 17V (Max) -45°C ~ 125°C (TJ) Inverting Independent IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6388ED
STMicroelectronics
2,460
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tube - 17V (Max) -40°C ~ 150°C (TJ) Inverting Independent IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
DGD1503S8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Independent IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6741TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
Tape & Reel (TR) - 5 V ~ 12 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous N-Channel MOSFET 41V - 1V,2.3V 2A,2A
L6741TR
STMicroelectronics
4,120
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
Cut Tape (CT) - 5 V ~ 12 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous N-Channel MOSFET 41V - 1V,2.3V 2A,2A
L6741TR
STMicroelectronics
4,120
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
- - 5 V ~ 12 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous N-Channel MOSFET 41V - 1V,2.3V 2A,2A
L6741
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER HI CURNT 8SOIC
Tube - 5 V ~ 12 V 0°C ~ 125°C (TJ) Non-Inverting Synchronous N-Channel MOSFET 41V - 1V,2.3V 2A,2A