Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 45
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- 5 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
TD352IDT
STMicroelectronics
26,196
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
- 12 V ~ 26 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
L6388ED013TR
STMicroelectronics
9,768
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
- 17V (Max) -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6384ED013TR
STMicroelectronics
2,788
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE HV 8SOIC
- 14.6 V ~ 16.6 V -45°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
ZXGD3107N8TC
Diodes Incorporated
2,931
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
- 40V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
STSR30D-TR
STMicroelectronics
1,471
3 jours
-
MOQ: 1  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
- 4 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 40ns,40ns - 1.5A,1.5A
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6741TR
STMicroelectronics
4,120
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HIGH CURR 8SOIC
- 5 V ~ 12 V 0°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 41V - 1V,2.3V 2A,2A
SN75452BPSR
Texas Instruments
4,206
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8SO
- 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.209",5.30mm Width) Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75451BPSR
Texas Instruments
2,986
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8SO
- 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.209",5.30mm Width) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
SN75453BPSR
Texas Instruments
1,139
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL PERIPHERAL DRVR 8SO
- 4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8-SOIC (0.209",5.30mm Width) Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 5ns,7ns 0.8V,2V 500mA,500mA
ZXGD3104N8TC
Diodes Incorporated
2,390
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
- 5 V ~ 25 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 480ns,50ns - 2.5A,7A
DGD2103MS8-13
Diodes Incorporated
2,401
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2304S8-13
Diodes Incorporated
1,703
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.7V,2.3V 290mA,600mA
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
DGD1504S8-13
Diodes Incorporated
2,301
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2103AS8-13
Diodes Incorporated
2,490
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 290mA,600mA
DGD2104AS8-13
Diodes Incorporated
2,455
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2101S8-13
Diodes Incorporated
2,320
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA