- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 45
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
5,330
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTRLR 4A 8SO
|
- | 5 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 450ns,21ns | - | 2.5A,6A | ||||
STMicroelectronics |
26,196
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
- | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | - | 100ns,100ns (Max) | 0.8V,4.2V | 1.3A,1.7A | ||||
STMicroelectronics |
9,768
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
- | 17V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,40ns | 1.1V,1.8V | 400mA,650mA | ||||
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
STMicroelectronics |
2,788
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
- | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1.5V,3.6V | 400mA,650mA | ||||
Diodes Incorporated |
2,931
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
- | 40V (Max) | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 175ns,20ns | - | 2A,7A | ||||
STMicroelectronics |
1,471
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SMART DRIVER SYNC 8-SOIC
|
- | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 40ns,40ns | - | 1.5A,1.5A | ||||
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
STMicroelectronics |
4,120
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 8SOIC
|
- | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 41V | - | 1V,2.3V | 2A,2A | ||||
Texas Instruments |
4,206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Texas Instruments |
1,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | 500mA,500mA | ||||
Diodes Incorporated |
2,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
- | 5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 480ns,50ns | - | 2.5A,7A | ||||
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
1,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.7V,2.3V | 290mA,600mA | ||||
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,301
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 250V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
2,455
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,2.5V | 210mA,360mA | ||||
Diodes Incorporated |
2,320
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA |