Fabricant:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 103
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ZXGD3103N8TC
Diodes Incorporated
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Tape & Reel (TR) - 5 V ~ 15 V Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
Cut Tape (CT) - 5 V ~ 15 V Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
ZXGD3103N8TC
Diodes Incorporated
5,330
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTRLR 4A 8SO
- - 5 V ~ 15 V Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 450ns,21ns - 2.5A,6A
TD352IDT
STMicroelectronics
25,000
3 jours
-
MOQ: 2500  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Tape & Reel (TR) - 12 V ~ 26 V Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD352IDT
STMicroelectronics
26,196
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Cut Tape (CT) - 12 V ~ 26 V Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
TD352IDT
STMicroelectronics
26,196
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
- - 12 V ~ 26 V Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
DGD2104MS8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HV SO8
Tape & Reel (TR) - 10 V ~ 20 V Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
Cut Tape (CT) - 10 V ~ 20 V Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104MS8-13
Diodes Incorporated
4,735
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HV SO8
- - 10 V ~ 20 V Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6398D
STMicroelectronics
1,820
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Tube - 10 V ~ 20 V Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
ZXGD3107N8TC
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Tape & Reel (TR) - 40V (Max) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
ZXGD3107N8TC
Diodes Incorporated
2,931
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Cut Tape (CT) - 40V (Max) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
ZXGD3107N8TC
Diodes Incorporated
2,931
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
- - 40V (Max) Non-Inverting Single Low-Side 1 N-Channel MOSFET - 175ns,20ns - 2A,7A
L6388ED
STMicroelectronics
2,460
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tube - 17V (Max) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,40ns 1.1V,1.8V 400mA,650mA
TD352ID
STMicroelectronics
1,708
3 jours
-
MOQ: 1  MPQ: 1
IC IGBT/MOSFET DRIVER ADV 8-SOIC
Tube - 12 V ~ 26 V Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET - 100ns,100ns (Max) 0.8V,4.2V 1.3A,1.7A
DGD1503S8-13
Diodes Incorporated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) - 10 V ~ 20 V Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Cut Tape (CT) - 10 V ~ 20 V Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD1503S8-13
Diodes Incorporated
3,648
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
- - 10 V ~ 20 V Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA
ZXGD3104N8TC
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Tape & Reel (TR) - 5 V ~ 25 V Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 480ns,50ns - 2.5A,7A
ZXGD3104N8TC
Diodes Incorporated
2,390
3 jours
-
MOQ: 1  MPQ: 1
IC SYNCH MOSFET CNTLR 8SO
Cut Tape (CT) - 5 V ~ 25 V Non-Inverting Single High-Side or Low-Side 1 N-Channel MOSFET - 480ns,50ns - 2.5A,7A