Number of Drivers:
Découvrez les produits 209
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD2108S8-13
Diodes Incorporated
2,376
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA
L6385ED013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Tape & Reel (TR) - 17V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6385ED013TR
STMicroelectronics
2,841
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
Cut Tape (CT) - 17V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6385ED013TR
STMicroelectronics
2,841
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE HV 8-SOIC
- - 17V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
L6571AD013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF-BRG W/OSC HV 8-SOIC
Tape & Reel (TR) - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
L6571AD013TR
STMicroelectronics
1,242
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF-BRG W/OSC HV 8-SOIC
Cut Tape (CT) - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
L6571AD013TR
STMicroelectronics
1,242
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR HALF-BRG W/OSC HV 8-SOIC
- - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
L6571AD
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRVR HALF BRDG HV OSC 8-SOIC
Tube - 10 V ~ 16.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) RC Input Circuit Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V - - 170mA,270mA
STSR2PMCD-TR
STMicroelectronics
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PMCD-TR
STMicroelectronics
11,534
3 jours
-
MOQ: 1  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PMCD-TR
STMicroelectronics
11,534
3 jours
-
MOQ: 1  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
- - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PMCD
STMicroelectronics
Enquête
-
-
MOQ: 2000  MPQ: 1
IC SMART DRIVER SYNC 8-SOIC
Tube - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PCD-TR
STMicroelectronics
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC SYNC RECT SMART DRIVER 8 SOIC
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PCD-TR
STMicroelectronics
4,095
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC RECT SMART DRIVER 8 SOIC
Cut Tape (CT) - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
STSR2PCD-TR
STMicroelectronics
4,095
3 jours
-
MOQ: 1  MPQ: 1
IC SYNC RECT SMART DRIVER 8 SOIC
- - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Low-Side 2 N-Channel MOSFET - 40ns,30ns - 2A,3.5A
DGD2104S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104S8-13
Diodes Incorporated
2,450
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2104S8-13
Diodes Incorporated
2,450
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2106S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA
DGD2106S8-13
Diodes Incorporated
2,360
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA