Number of Drivers:
Découvrez les produits 209
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
DGD2103AS8-13
Diodes Incorporated
2,490
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 290mA,600mA
DGD2103AS8-13
Diodes Incorporated
2,490
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 290mA,600mA
DGD2104AS8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2104AS8-13
Diodes Incorporated
2,455
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
DGD2104AS8-13
Diodes Incorporated
2,455
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,2.5V 210mA,360mA
L6385ED
STMicroelectronics
1,518
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-SOIC
Tube - 17V (Max) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 50ns,30ns 1.5V,3.6V 400mA,650mA
DGD2101S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2101S8-13
Diodes Incorporated
2,320
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
DGD2101S8-13
Diodes Incorporated
2,320
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 290mA,600mA
L6399DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6399DTR
STMicroelectronics
2,345
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6399DTR
STMicroelectronics
2,345
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 75ns,35ns 1.1V,1.9V 290mA,430mA
L6498DTR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
Tape & Reel (TR) - - - 8-SOIC (0.154",3.90mm Width) - - - - - - - - -
L6498DTR
STMicroelectronics
1,930
3 jours
-
MOQ: 1  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
Cut Tape (CT) - - - 8-SOIC (0.154",3.90mm Width) - - - - - - - - -
L6498DTR
STMicroelectronics
1,930
3 jours
-
MOQ: 1  MPQ: 1
PWR MGMT MOSFET/PWR DRIVER
- - - - 8-SOIC (0.154",3.90mm Width) - - - - - - - - -
DGD2190S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 0.8V,2.5V 4.5A,4.5A
DGD2190S8-13
Diodes Incorporated
2,297
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 0.8V,2.5V 4.5A,4.5A
DGD2190S8-13
Diodes Incorporated
2,297
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,20ns 0.8V,2.5V 4.5A,4.5A
DGD2108S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA
DGD2108S8-13
Diodes Incorporated
2,376
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.6V,2.5V 290mA,600mA