- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 209
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
1,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
Cut Tape (CT) | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
1,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209"，5.30mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Tape & Reel (TR) | - | 5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 480ns，50ns | - | 2.5A，7A | ||
|
|
|
Diodes Incorporated |
2,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
Cut Tape (CT) | - | 5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 480ns，50ns | - | 2.5A，7A | ||
|
|
|
Diodes Incorporated |
2,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNCH MOSFET CNTLR 8SO
|
- | - | 5 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 480ns，50ns | - | 2.5A，7A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.7V，2.3V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
1,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.7V，2.3V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
1,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.7V，2.3V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,301
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,301
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，2.5V | 290mA，600mA |
