- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
Cut Tape (CT) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
7,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
7,973
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-SOIC
|
- | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A |
