- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 23
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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|
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
7,114
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
7,114
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
2,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
STMicroelectronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 8SOIC
|
Tape & Reel (TR) | - | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 41V | - | 2A，2A | ||
|
|
|
STMicroelectronics |
4,120
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 8SOIC
|
Cut Tape (CT) | - | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 41V | - | 2A，2A | ||
|
|
|
STMicroelectronics |
4,120
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH CURR 8SOIC
|
- | - | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 41V | - | 2A，2A | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER HI CURNT 8SOIC
|
Tube | - | 5 V ~ 12 V | 0°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 41V | - | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
7,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
7,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
3,211
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
3,211
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A | ||
|
|
|
Texas Instruments |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 5A，5A |
