Découvrez les produits 43
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Input Type Channel Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX626CSA+
Maxim Integrated
4,635
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX628CSA+
Maxim Integrated
3,509
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Inverting,Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX627CSA+
Maxim Integrated
1,238
3 jours
-
MOQ: 1  MPQ: 1
IC DVR MOSFET DUAL NON-INV 8SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
FAN73901MX
ON Semiconductor
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRIVER HI/LOW SIDE 8SOIC
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 2.5A,2.5A
FAN73901MX
ON Semiconductor
4,734
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HI/LOW SIDE 8SOIC
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 2.5A,2.5A
FAN73901MX
ON Semiconductor
4,734
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HI/LOW SIDE 8SOIC
- - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 2.5A,2.5A
MAX626CSA+T
Maxim Integrated
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX626CSA+T
Maxim Integrated
6,638
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Cut Tape (CT) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX626CSA+T
Maxim Integrated
6,638
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
- - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX627ESA+
Maxim Integrated
140
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX627CSA+T
Maxim Integrated
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
MAX628ESA+
Maxim Integrated
200
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC Inverting,Non-Inverting Independent Low-Side N-Channel,P-Channel MOSFET - 0.8V,2.4V 2A,2A
FAN7390MX
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DRIVER GATE HI/LO SIDE 8-SOP
Tape & Reel (TR) - 10 V ~ 22 V -40°C ~ 150°C (TJ) 8-SOIC Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 4.5A,4.5A
FAN7390MX
ON Semiconductor
2,657
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER GATE HI/LO SIDE 8-SOP
Cut Tape (CT) - 10 V ~ 22 V -40°C ~ 150°C (TJ) 8-SOIC Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 4.5A,4.5A
FAN7390MX
ON Semiconductor
2,657
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER GATE HI/LO SIDE 8-SOP
- - 10 V ~ 22 V -40°C ~ 150°C (TJ) 8-SOIC Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 4.5A,4.5A
DGD2190S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SO Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4.5A,4.5A
DGD2190S8-13
Diodes Incorporated
2,297
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SO Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4.5A,4.5A
DGD2190S8-13
Diodes Incorporated
2,297
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SO Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 0.8V,2.5V 4.5A,4.5A
FAN7190MX-F085
ON Semiconductor
39
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LOW SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 10 V ~ 22 V -40°C ~ 150°C (TJ) 8-SOP Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 4.5A,4.5A
FAN7190MX-F085
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR HI/LOW SIDE 8SOIC
- Automotive,AEC-Q100 10 V ~ 22 V -40°C ~ 150°C (TJ) 8-SOP Non-Inverting Independent Half-Bridge IGBT,N-Channel MOSFET 600V 1.2V,2.5V 4.5A,4.5A