Fabricant:
Voltage - Supply:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 10
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXDD609SIA
IXYS Integrated Circuits Division
23,077
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
IXDD609SIATR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
IXDI609SIATR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
IXDN609SIATR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
IXDI609SIA
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
IXDN609SIA
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
Tube - 4.5 V ~ 35 V -55°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
AUIRS2012STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 2A,2A
AUIRS2012STR
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 2A,2A
AUIRS2012STR
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 2A,2A
AUIRS2012STR
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
- Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 2A,2A