- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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Découvrez les produits 248
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
Infineon Technologies |
20,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs,1μs | 0.9V,2.7V | ||||
Infineon Technologies |
20,745
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs,1μs | 0.9V,2.7V | ||||
Infineon Technologies |
20,745
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
- | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs,1μs | 0.9V,2.7V | ||||
Renesas Electronics America Inc. |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | ||||
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | ||||
Renesas Electronics America Inc. |
5,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-SOIC
|
- | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | ||||
Texas Instruments |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
Tape & Reel (TR) | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 1.5V,3.5V | ||||
Texas Instruments |
7,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
Cut Tape (CT) | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 1.5V,3.5V | ||||
Texas Instruments |
7,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
- | - | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 1.5V,3.5V | ||||
Microchip Technology |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSF HI/LO SIDE 8SOIC
|
Tape & Reel (TR) | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V,2V | ||||
Microchip Technology |
4,346
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF HI/LO SIDE 8SOIC
|
Cut Tape (CT) | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V,2V | ||||
Microchip Technology |
4,346
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF HI/LO SIDE 8SOIC
|
- | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V,2V | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | ||||
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Cut Tape (CT) | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | ||||
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
- | EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | ||||
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | ||||
Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | ||||
Infineon Technologies |
8,012
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8SOIC
|
- | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | ||||
Texas Instruments |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns,10ns | - | ||||
Texas Instruments |
24,234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC MOSFET DVR 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns,10ns | - |