- Packaging：
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- Series：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 22
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
9,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
45,818
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3800 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI/LOW SIDE 600V 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 950 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 950 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2565 MPQ: 1
|
IC DRIVER HI SIDE RECHARGE 8-SOI
|
Tube | - | -55°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | N-Channel MOSFET | 150V | 200ns，100ns | 1.4V，3V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI SIDE RECHARGE 8SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | N-Channel MOSFET | 150V | 200ns，100ns | 1.4V，3V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 475 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
|
Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，25ns | 0.8V，2.5V | 200mA，350mA |
