Supplier Device Package:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 133
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
TPS2814DR
Texas Instruments
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Tape & Reel (TR) - 4 V ~ 14 V 8-SOIC Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2814DR
Texas Instruments
7,973
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Cut Tape (CT) - 4 V ~ 14 V 8-SOIC Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2814DR
Texas Instruments
7,973
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
- - 4 V ~ 14 V 8-SOIC Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2812DR
Texas Instruments
7,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Tape & Reel (TR) - 4 V ~ 14 V 8-SOIC Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2812DR
Texas Instruments
9,307
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Cut Tape (CT) - 4 V ~ 14 V 8-SOIC Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2812DR
Texas Instruments
9,307
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
- - 4 V ~ 14 V 8-SOIC Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
FAN3224TMX-F085
ON Semiconductor
5,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DVR LOSIDE DUAL 4A 8SOIC
Tape & Reel (TR) Automotive,AEC-Q100 4.5 V ~ 18 V 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 12ns,9ns 0.8V,2V 5A,5A
FAN3224TMX-F085
ON Semiconductor
7,040
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOSIDE DUAL 4A 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 18 V 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 12ns,9ns 0.8V,2V 5A,5A
FAN3224TMX-F085
ON Semiconductor
7,040
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOSIDE DUAL 4A 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 18 V 8-SOIC Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 12ns,9ns 0.8V,2V 5A,5A
TPS2812D
Texas Instruments
3,669
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS FET DRIVER 8-SOIC
Tube - 4 V ~ 14 V 8-SOIC Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2814D
Texas Instruments
2,741
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS FET DRIVER 8-SOIC
Tube - 4 V ~ 14 V 8-SOIC Inverting,Non-Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2811D
Texas Instruments
2,415
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL 2A INV FET DRIVER 8-SOIC
Tube - 4 V ~ 14 V 8-SOIC Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2811DR
Texas Instruments
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Tape & Reel (TR) - 4 V ~ 14 V 8-SOIC Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2811DR
Texas Instruments
4,997
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
Cut Tape (CT) - 4 V ~ 14 V 8-SOIC Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
TPS2811DR
Texas Instruments
4,997
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS MOSFET DRVR 8-SOIC
- - 4 V ~ 14 V 8-SOIC Inverting Synchronous Low-Side 2 N-Channel,P-Channel MOSFET - 14ns,15ns 1V,4V 2A,2A
UCC27710D
Texas Instruments
2,069
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER- 0.5A/1A PEAK C
Tube - 10 V ~ 20 V 8-SOIC - Independent High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 600V 35ns,16ns 1.2V,2V 500mA,1A
DGD2103S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Tape & Reel (TR) - 10 V ~ 20 V 8-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
Cut Tape (CT) - 10 V ~ 20 V 8-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
DGD2103S8-13
Diodes Incorporated
2,480
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8SO
- - 10 V ~ 20 V 8-SO Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,35ns 0.8V,2.5V 290mA,600mA
DGD1504S8-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF BRIDGE SO-8
Tape & Reel (TR) - 10 V ~ 20 V 8-SO Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 250V 70ns,35ns 0.8V,2.5V 290mA,600mA