- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
8,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
8,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
3,476
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 0.8V，2.7V | 1A，1A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 0.7V，2.5V | 1A，1A | ||
|
|
|
Infineon Technologies |
2,550
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 0.7V，2.5V | 1A，1A | ||
|
|
|
Infineon Technologies |
2,550
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 0.7V，2.5V | 1A，1A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 12V 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2V | - | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 12V 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2V | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 12V 8-SOIC
|
- | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 0.8V，2V | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 8100 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8-SOP
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 8100 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 0.8V，2.5V | 4A，4A |
