- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Supplier Device Package：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Maxim Integrated |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
|
|
|
STMicroelectronics |
1,708
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT/MOSFET DRIVER ADV 8-SOIC
|
Tube | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
Texas Instruments |
2,415
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A INV FET DRIVER 8-SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Maxim Integrated |
140
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Texas Instruments |
1,358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI/LO SIDE 3A 8SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 430ns，260ns | 2.3V，- | 3A，3A | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER FLY BACK 8-SOIC
|
Tape & Reel (TR) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 40ns，40ns | - | 1.5A，1.5A | ||
|
|
|
STMicroelectronics |
1,471
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FLY BACK 8-SOIC
|
Cut Tape (CT) | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 40ns，40ns | - | 1.5A，1.5A | ||
|
|
|
STMicroelectronics |
1,471
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SMART DRIVER SYNC 8-SOIC
|
- | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 40ns，40ns | - | 1.5A，1.5A | ||
|
|
|
STMicroelectronics |
1,055
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SMART DRIVER SYNC 8-SOIC
|
Tube | - | 4 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-SO | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 40ns，40ns | - | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOIC
|
Bulk | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
|
|
|
Maxim Integrated |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
|
|
|
Maxim Integrated |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | - | 2A，2A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
HALF BRIDGE GATE DRIVER
|
Tape & Reel (TR) | - | - | - | 8-SOP | - | - | - | - | - | - | - | - | - |
