- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 2,619
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
2,979
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL 5A NEG VOUT 8SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.2V | 3A,5A | ||||
Texas Instruments |
2,689
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL 5A NEG VOUT 8SOIC
|
Tube | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.2V | 3A,5A | ||||
Infineon Technologies |
1,543
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 130ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Texas Instruments |
2,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 8-SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC | Inverting,Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Maxim Integrated |
332
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-SOIC
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - | ||||
Texas Instruments |
2,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 7ns,6ns | 1V,2.3V | 5A,5A | ||||
Texas Instruments |
3,956
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,701
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
1,151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
2,454
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 8-SOIC
|
Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 990ns,715ns | 2.3V,- | 1A,1A | ||||
Texas Instruments |
2,457
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SYNC BUCK FET DRIVER 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 28V | 50ns,40ns | 1V,2V | 2.7A,2.4A | ||||
Texas Instruments |
3,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Maxim Integrated |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
3,907
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Infineon Technologies |
987
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA |