- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
ON Semiconductor |
25,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW GATE 8-SOP
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 60ns，30ns | 0.8V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
Tape & Reel (TR) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
21,270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
Cut Tape (CT) | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
21,270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
- | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
|
|
|
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
Cut Tape (CT) | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
|
|
|
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | - | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
|
|
|
Infineon Technologies |
240,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Texas Instruments |
35,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
36,233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A |
