- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 2,619
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
3,253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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|
|
Infineon Technologies |
3,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
|
|
|
Infineon Technologies |
3,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 8DSO
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
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|
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Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
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|
|
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
- | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
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Texas Instruments |
1,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPHERAL DRVR DUAL HS 8SOIC
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
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Infineon Technologies |
4,452
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
11,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
11,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
1,075
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF-BRIDGE SHTDN 8-SOIC
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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|
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Infineon Technologies |
2,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Cut Tape (CT) | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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|
|
Infineon Technologies |
2,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
- | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
3,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET IGBT 8SO
|
Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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|
|
STMicroelectronics |
2,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE HV 8-SOIC
|
Tube | - | 17V (Max) | -40°C ~ 150°C (TJ) | 8-SO | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
|
|
|
Texas Instruments |
2,072
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
IXYS Integrated Circuits Division |
1,015
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，3V | 3A，3A |
